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| BCR12CS-12LB Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) REJ03G0470-0300 Rev.3.00 Nov 30, 2007 Features * IT (RMS) : 12 A * VDRM : 600 V * IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 * Non-Insulated Type * Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 3 2 3 1 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G0470-0300 Page 1 of 7 Rev.3.00 Nov 30, 2007 BCR12CS-12LB (The product guaranteed maximum junction temperature of 150C) Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Ratings 12 120 60 5 0.5 10 2 - 40 to +150 - 40 to +150 1.2 Unit A A A2s W W V A C C g Conditions Commercial frequency, sine full wave Note3 360 conduction, Tc = 123C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2/0.1 -- 10/1 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 30Note6 30Note6 30Note6 -- 1.8 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 20 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Note4 Tj = 125C/150C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 6.0 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c REJ03G0470-0300 Page 2 of 7 Rev.3.00 Nov 30, 2007 BCR12CS-12LB (The product guaranteed maximum junction temperature of 150C) Performance Curves Maximum On-State Characteristics 102 7 5 200 Rated Surge On-State Current Surge On-State Current (A) 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) 3 2 101 7 5 3 2 Tj = 150C Tj = 25C 100 7 5 0.5 1.0 1.5 2 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 10-1 IRGT I, IRGT III VGT = 1.5V IFGT I IRGT I IFGT I, IRGT III VGD = 0.1V 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Transient Thermal Impedance (C/W) Junction Temperature (C) Conduction Time (Cycles at 60Hz) REJ03G0470-0300 Page 3 of 7 Rev.3.00 Nov 30, 2007 BCR12CS-12LB (The product guaranteed maximum junction temperature of 150C) Allowable Case Temperature vs. RMS On-State Current 160 Maximum On-State Power Dissipation 32 On-State Power Dissipation (W) 24 360 Conduction Resistive, 20 inductive loads 16 12 8 4 0 0 2 4 6 8 10 12 14 16 Case Temperature (C) 28 140 120 Curves apply regardless of conduction angle 100 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 4 6 2 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (C) 120 100 80 60 x 60 x t2.3 120 x 120 x t2.3 100 x 100 x t2.3 Ambient Temperature (C) 140 All fins are black painted aluminum and greased 140 120 100 80 60 40 20 0 0 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 8 4 6 10 12 14 16 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 103 7 5 4 3 2 102 7 5 4 3 2 Holding Current vs. Junction Temperature Typical Example 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Junction Temperature (C) REJ03G0470-0300 Page 4 of 7 Rev.3.00 Nov 30, 2007 BCR12CS-12LB (The product guaranteed maximum junction temperature of 150C) Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Latching Current (mA) Distribution T2+, G- Typical Example 101 7 5 3 T +, G+ 2 2 Typical Example T2-, G- 0 10 -40 0 40 80 120 160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) 160 140 120 100 80 60 40 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) Typical Example Tj = 125C Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) 160 140 120 100 80 60 40 20 Typical Example Tj = 150C III Quadrant III Quadrant I Quadrant I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics (Tj=125C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 102 Typical Example 7 Tj = 125C 5 IT = 4A 3 = 500s 2 VD = 200V f = 3Hz 101 7 5 3 2 100 7 100 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Commutation Characteristics (Tj=150C) 102 Typical Example Main Voltage 7 (dv/dt)c 5 Tj = 150C Main Current IT = 4A IT 3 = 500s 2 VD = 200V f = 3Hz 101 7 I Quadrant 5 3 2 100 7 100 Minimum Characteristics Value Time VD (di/dt)c Time Minimum Characteristics Value I Quadrant III Quadrant III Quadrant 23 5 7 101 23 5 7 102 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rate of Decay of On-State Commutating Current (A/ms) REJ03G0470-0300 Page 5 of 7 Rev.3.00 Nov 30, 2007 BCR12CS-12LB (The product guaranteed maximum junction temperature of 150C) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Typical Example IFGT I IRGT I IRGT III 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 Recommended Circuit Values Around The Triac Load C1 6V V A 330 6V V A 330 R1 C0 R0 Test Procedure I 6 Test Procedure II C1 = 0.1 to 0.47F C0 = 0.1F R0 = 100 R1 = 47 to 100 6V V A 330 Test Procedure III REJ03G0470-0300 Page 6 of 7 Rev.3.00 Nov 30, 2007 BCR12CS-12LB (The product guaranteed maximum junction temperature of 150C) Package Dimensions Package Name TO-220S JEITA Package Code SC-83 RENESAS Code PRSS0004AB-A Previous Code TO-220S MASS[Typ.] 1.2g Unit: mm 1.5Max 10.5Max 4.5 1.3 1.5Max 8.6 0.3 9.8 0.5 3.0 -0.5 +0.3 0 +0.3 -0 1 5 0.8 0.5 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Plastic Magazine (Tube) Quantity 1000 50 Standard order code Type name - T +Direction (1 or 2) +1 Type name Standard order code example BCR12CS-12LB-T11 BCR12CS-12LB Note : Please confirm the specification about the shipping in detail. REJ03G0470-0300 Page 7 of 7 Rev.3.00 Nov 30, 2007 2.6 0.4 4.5 (1.5) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. 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